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Width-dependent hole mobility in top-down fabricated Si-core/Ge-shell nanowire metal-oxide-semiconductor-field-effect-transistors

✍ Scribed by Hashemi, Pouya; Kim, Meekyung; Hennessy, John; Gomez, Leonardo; Antoniadis, Dimitri A.; Hoyt, Judy L.


Book ID
120496040
Publisher
American Institute of Physics
Year
2010
Tongue
English
Weight
602 KB
Volume
96
Category
Article
ISSN
0003-6951

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