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Width and temperature dependence of lithography-induced magnetic anisotropy in (Ga,Mn)As wires

โœ Scribed by M. Kohda; J. Ogawa; J. Shiogai; F. Matsukura; Y. Ohno; H. Ohno; J. Nitta


Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
442 KB
Volume
42
Category
Article
ISSN
1386-9477

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๐Ÿ“œ SIMILAR VOLUMES


Temperature dependence of rearrangement
โœ Nariaki Okamoto; Takashi Fukuda; Tomoyuki Kakeshita ๐Ÿ“‚ Article ๐Ÿ“… 2008 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 155 KB

We have examined the condition for the rearrangement of martensite variants (RMV) by magnetic field in a wide temperature range for three types of Ni-Mn-Ga ferromagnetic shape memory alloys: a Ni 2 MnGa with the 10M martensite, a Ni 2.02 Mn 1.09 Ga 0.89 (at.%) with the 14M martensite and a Ni 2.14 M