Wide Bandgap Semiconductor Spintronics

✍ Scribed by Vladimir Litvinov

• Publisher: Jenny Stanford Publishing
• Year: 2024
• Tongue: English
• Leaves: 240
• Edition: 2
• Category: Library

✦ Synopsis

This second edition of the book presents spintronic properties of III–V nitride semiconductors. As wide bandgap III-nitride nanostructures are relatively new materials, the book pays particular attention to the difference between zinc-blende GaAs- and wurtzite GaN-based structures where the Rashba spin–orbit interaction plays a crucial role in voltage-controlled spin engineering. It also deals with topological insulators and discusses electrically driven zero-magnetic-field spin-splitting of surface electrons with respect to the specifics of electron-localized spin interaction and voltage-controlled ferromagnetism. It describes the recently identified zero-gap state―an anomalous quantum semimetal. The book comprises calculation of topological indexes in semiconductor and semimetal phases. It compares results that follow from the low-energy model and the Bernevig–Huges–Zhang model, which accounts for the full-Brillouin-zone electron spectrum. It also discusses the fractional quantization of Hall conductance and performs the direct calculation of Chern numbers for the inverted GaN/InN quantum well, determining topological properties by Chern number |C |=2.

The book explores and actively discusses semiconductor spintronics and proposes various device implementations along the way. Although writings on this topic appear in the current literature, this book is focused on the materials science side of the question, providing a theoretical background for the most common concepts of spin-electron physics. It covers generic topics in spintronics without entering into device specifics since its aim is to give instructions to be used in solving problems of a general and specific nature. It is intended for graduate students and will serve as an introductory course in this specific field of solid state theory and applications.

✦ Table of Contents

Cover
Half Title
Title Page
Copyright Page
Dedication
Table of Contents
Preface
Chapter 1: GaN Band Structure
1.1: Symmetry
1.2: Hamiltonian
1.3: Valence Band Structure
1.4: Linear k-Terms in Wurtzite Nitrides
Chapter 2: Rashba Hamiltonian
2.1: Bulk Inversion Asymmetry
2.2: Structure Inversion Asymmetry
2.3: Microscopic Theory of Rashba Spin Splitting in GaN
Chapter 3: Rashba Spin Splitting in III-Nitride Heterostructures and Quantum Wells
3.1: Spontaneous and Piezoelectric Polarization
3.2: Remote and Polarization Doping
3.3: Rashba Interaction in Polarization-Doped Heterostructure
3.4: Structurally Symmetric InxGa1–xN Quantum Well
3.4.1: Rashba Coefficient in Ga-Face QW
3.4.2: Rashba Coefficient in N-Face QW
3.5: Experimental Rashba Spin Splitting
3.6: Spin Transistor
Chapter 4: Tunnel Spin Filter in Rashba Quantum Structure
4.1: Double-Barrier Resonant Tunneling Diode
4.1.1: Current–Voltage Characteristics
4.1.2: Spin Current
4.1.3: Tunnel Transparency
4.1.4: Polarization Fields
4.1.5: Spin Polarization
4.2: Spin Filtering in a Single-Barrier Tunnel Contact
4.2.1: Hamiltonian
4.2.2: Boundary Conditions and Spin-Selective Tunnel Transmission
Chapter 5: Exchange Interaction in Semiconductors and Metals
5.1: Direct Exchange Interaction
5.2: Indirect Exchange Interaction
5.3: Three-Dimensional Metal: RKKY Model
5.4: RKKY Interaction in One and Two Dimensions
5.4.1: 1D Metal
5.4.2: 2D Metal
5.5: Exchange Interaction in Semiconductors
5.6: Indirect Magnetic Exchange through the Impurity Band
5.7: Conclusions
Chapter 6: Ferromagnetism in III-V Semiconductors
6.1: Mean-Field Approximation
6.2: Percolation Mechanism of the Ferromagnetic Phase Transition
6.3: Mixed Valence and Ferromagnetic Phase Transition
6.3.1: Magnetic Moment
6.4: Ferromagnetic Transition in a Mixed Valence Magnetic Semiconductor
6.4.1: Hamiltonian and Mean-Field Approximation
6.4.2: Percolation
6.5: Conclusions
Chapter 7: Topological Insulators
7.1: Bulk Electrons in Bi2Te3
7.2: Surface Dirac Electrons
7.3: Effective Surface Hamiltonian
7.4: Spatial Distribution of Surface Electrons
7.5: Topological Invariant
Chapter 8: Magnetic Exchange Interaction in Topological Insulator
8.1: Spin-Electron Interaction
8.2: Indirect Exchange Interaction Mediated by Surface Electrons
8.3: Range Function in Topological Insulator
8.4: Conclusions
Chapter 9: Quantum Anomalous Semimetals
9.1: Bulk Electrons in Narrow-Gap CdHgTe Alloys
9.2: Energy Spectrum and Band Inversion in a Quantum Well
9.2.1: Bernevig–Huges–Zhang Model
9.3: Chern Number in a Continuous Model
9.4: Chern Number in a BHZ Model
Chapter 10: Quantum Anomalous Hall Effect in Wurtzite Quantum Wells
10.1: Effective Hamiltonians
10.2: Quantum Hall States
10.2.1: QAH Effect
10.2.2: QSH Effec
10.3: Conclusion
Index