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Wide bandgap power semiconductor packaging : materials, components, and reliability

โœ Scribed by Suganuma, Katsuaki


Publisher
Woodhead Publishing
Year
2018
Tongue
English
Leaves
242
Series
Woodhead Publishing series in electronic and optical materials.
Category
Library

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โœฆ Synopsis


"Wide Bandgap Power Semiconductor Packaging: Materials, Components, and Reliability addresses the key challenges that WBG power semiconductors face during integration, including heat resistance, heat dissipation and thermal stress, noise reduction at high frequency and discrete components, and challenges in interfacing, metallization, plating, bonding and wiring. Experts on the topic present the latest research on  Read more...

โœฆ Table of Contents


Machine generated contents note: pt. One Future prospects --
1. Future technology trends / Oliver Hilt --
1.1. Power electronics system development trend --
Impact on next generation power devices --
1.2. Future device concepts: SiC-based power devices --
1.3. GaN-based power devices --
1.4. WBG power devices and their application --
Acknowledgments --
References --
Further reading --
pt. Two Fundamentals and materials --
2. Interconnection technologies / Katsuaki Suganuma --
2.1. Introduction --
2.2. Die-attach technology --
2.3. Wiring --
2.4. Planer and 3D interconnections --
References --
3. Substrate / Hiroyuki Miyazaki --
3.1. Introduction --
3.2. Ceramic substrates for power modules --
3.3. Metallized ceramic substrates --
3.4. Issues in metallized ceramic substrates --
3.5. Conclusions --
References --
pt. Three Components --
4. Magnetic materials / Daichi Azuma --
4.1. Introduction --
4.2. Magnetism in magnetic materials --
4.3. Classification of soft magnetic materials and comparison of magnetic characteristics --
4.4. Application examples and comparisons --
4.5. Future trends 107 References --
pt. Four Performance Measurement and Reliability Evaluation --
5. Technologies of a cooling device for power semiconductor / Shinobu Yamauchi --
5.1. Introduction --
5.2. Characteristics of the SiC/GaN power semiconductors and the issues for cooling --
5.3. Ordinary design --
5.4. The expected technologies for the cooling of the power semiconductor --
5.5. Materials for a cold plate and heat sink --
References --
6. Thermal transient testing / Marta Rencz --
6.1. Overview and introduction to thermal transient measurements --
6.2. Thermal transient measurements --
6.3. The linear theory: Zth curves and structure functions --
6.4. Thermal testing of three terminal devices --
6.5. Further examples for thermal analysis using structure functions --
6.6. Thermal transient measurement of wide band gap semiconductors --
6.7. Summary --
References --
Further reading --
7. Reliability evaluation / Roland Rupp --
7.1. Introduction --
7.2. Gate oxide reliability of SiC MOS structures --
7.3. High temperature reverse bias test --
7.4. High temperature high humidity reverse bias test --
7.5. Temperature cycling --
7.6. Power cycling --
7.7. Repetitive bipolar operation test --
7.8. Further reliability aspects --
7.9. GaN reliability evaluation state of knowledge --
7.10. Summarizing remarks for reliability investigations in wide bandgap devices --
References --
Further reading --
8. Computer-aided engineering simulations / Francesco Iannuzzo --
8.1. Introduction --
8.2. Thermal simulation of power semiconductors --
8.3. Electrothermal optimization --
8.4. Case study --
8.5. Conclusions.

โœฆ Subjects


Wide gap semiconductors;Microelectronic packaging


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