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Wide-Bandgap III–V nitride based avalanche transit-time diode in Terahertz regime: Studies on the effects of punch through on high frequency characteristics and series resistance of the device

✍ Scribed by Moumita Mukherjee; Sitesh Kumar Roy


Book ID
108079258
Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
414 KB
Volume
10
Category
Article
ISSN
1567-1739

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