In this paper we report the visible-near-infrared light emission properties of nanocrystalline silicon (nc-Si) light emitting devices (LEDs) based on nc-Si/SiO 2 multilayer structures. Multilayer structures of silicon-rich oxide (SRO) and SiO 2 were grown by plasma enhanced chemical vapor deposition
β¦ LIBER β¦
White-light-emitting devices based on organic multilayer structure
β Scribed by J.T Lim; N.H Lee; Y.J Ahn; G.W Kang; C.H Lee
- Publisher
- Elsevier Science
- Year
- 2002
- Tongue
- English
- Weight
- 179 KB
- Volume
- 2
- Category
- Article
- ISSN
- 1567-1739
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## Abstract The stateβofβthe art in the white organic light emitting devices (WOLEDs) is reviewed for further developments with a view to enhance the capture of triplet emission. In particular, applying the new excitonβspinβorbitβphoton interaction operator as a perturbation, rates of spontaneous e