๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Wetting and reaction between Si droplet and SiO2substrate

โœ Scribed by Hideyuki Kanai; Sunao Sugihara; Hiroshi Yamaguchi; Tomonori Uchimaru; Naoyuki Obata; Toshiyuki Kikuchi; Fusaki Kimura; Masato Ichinokura


Book ID
106393528
Publisher
Springer
Year
2007
Tongue
English
Weight
566 KB
Volume
42
Category
Article
ISSN
0022-2461

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Reaction between SO2 and wet metal surfa
โœ Nils-Gosta Vannerberg; Toms Sydberger ๐Ÿ“‚ Article ๐Ÿ“… 1970 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 293 KB
Characterization of silicon carbide thin
โœ P. Zanola; E. Bontempi; C. Ricciardi; G. Barucca; L.E. Depero ๐Ÿ“‚ Article ๐Ÿ“… 2004 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 227 KB

Due to its outstanding electrical and mechanical properties, silicon carbide (SiC) is considered a leading semiconducting material for high temperature sensors. Since the piezoresistive effect in SiC is highly anisotropic and exhibits a dependence on the crystal orientation, the role of the substra