Wettability control of polystyrene by ion implantation
โ Scribed by Suzuki Yoshiaki; Kusakabe Masahiro; Iwaki Masaya
- Book ID
- 113286209
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 410 KB
- Volume
- 91
- Category
- Article
- ISSN
- 0168-583X
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๐ SIMILAR VOLUMES
A study has been made of the modification of the wettability and the surface potential of polystyrene by ion bombardment and implantation. Substrates used were polystyrene (PS) dishes. Ne bombardment and Naion implantation were performed at energies of 50 and 150 keV with fluences between 1 x 10(14)
Plasma immersion ion implantation (PIII), using bias voltages of 5, 10, 15 and 20 kV in an argon plasma and fluences in the range of 2 ร 10 14 -2 ร 10 16 ions/cm 2 , was applied to 100 nm polystyrene films coated on silicon wafer substrates. The etching kinetics and structural changes induced in the