๐”– Bobbio Scriptorium
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Wettability control of polystyrene by ion implantation

โœ Scribed by Suzuki Yoshiaki; Kusakabe Masahiro; Iwaki Masaya


Book ID
113286209
Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
410 KB
Volume
91
Category
Article
ISSN
0168-583X

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A study has been made of the modification of the wettability and the surface potential of polystyrene by ion bombardment and implantation. Substrates used were polystyrene (PS) dishes. Ne bombardment and Naion implantation were performed at energies of 50 and 150 keV with fluences between 1 x 10(14)

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Plasma immersion ion implantation (PIII), using bias voltages of 5, 10, 15 and 20 kV in an argon plasma and fluences in the range of 2 ร‚ 10 14 -2 ร‚ 10 16 ions/cm 2 , was applied to 100 nm polystyrene films coated on silicon wafer substrates. The etching kinetics and structural changes induced in the