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Wet-chemistry surface treatment for dark-current reduction that preserves lateral dimensions of reactive ion etched Ga/sub 0.47/In/sub 0.53/As p-i-n diode photodetectors

✍ Scribed by Porkolab, G.A.; Chen, Y.J.; Merritt, S.A.; Tabatabaei, S.A.; Agarwala, S.; Johnson, F.G.; King, O.; Dagenais, M.; Wilson, R.A.; Stone, D.R.


Book ID
119785977
Publisher
IEEE
Year
1997
Tongue
English
Weight
80 KB
Volume
9
Category
Article
ISSN
1041-1135

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