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Wet chemical MESA etching of InGaP and GaAs with solutions based on HCl, CH3COOH, and H2O2

✍ Scribed by Gregušová, D. ;Eliáš, P. ;Malacký, L. ;Kúdela, R. ;Škriniarová, J.


Book ID
105384764
Publisher
John Wiley and Sons
Year
1995
Tongue
English
Weight
401 KB
Volume
151
Category
Article
ISSN
0031-8965

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