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Well-width dependent studies of InGaN-GaN single-quantum wells using time-resolved photoluminescence techniques

✍ Scribed by Chi-Kuang Sun; Keller, S.; Tien-Lung Chiu; Wang, G.; Minsky, M.S.; Bowers, J.E.; DenBaars, S.P.


Book ID
117866053
Publisher
IEEE
Year
1997
Tongue
English
Weight
142 KB
Volume
3
Category
Article
ISSN
1077-260X

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## Abstract GaN/AlGaN multiple quantum wells (MQWs) of varying well width grown on planar __c__‐plane GaN and __a__‐plane GaN templates fabricated by lateral epitaxial overgrowth (LEO) have been studied by subpicosecond photoluminescence (PL) downconversion and time‐correlated single photon countin