Thin and shallow layers of some 50-150 nm were produced by ion implantation of Co ions in Si wafers and afterwards characterized by concentration-depth profiling. Two methods were applied for that purpose: a novel method combining a stepwise wet-chemical etching of an implanted wafer with total refl
β¦ LIBER β¦
Wedge etching by anodic oxidation and determination of shallow boron profile by ion beam analysis
β Scribed by J. Gyulai; G. Battistig; T. Lohner; Z. Hajnal
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 254 KB
- Volume
- 266
- Category
- Article
- ISSN
- 0168-583X
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The simultaneous isotopic analysis of lithium and boron by the Li 2 BO 2 ion beam method involves measurements of two different molecular abundance ratios (say, R j AEd j and R k AEd k ), and subsequently extensive calculations to arrive at the analyte isotopic ratios (say, L and Y). It is not prese