𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Weak antilocalization and spin-orbit interaction in a In0.53Ga0.47As/InP quantum well in the persistent photoconductivity state

✍ Scribed by D. D. Bykanov; S. V. Novikov; T. A. Polyanskaya; I. G. Savel’ev

Book ID
110133136
Publisher
Springer
Year
2002
Tongue
English
Weight
122 KB
Volume
36
Category
Article
ISSN
1063-7826

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Quantum well thickness dependence of spi
Quantum well thickness dependence of spin orbit interaction in gated InP/In0.8Ga0.2As/In0.52Al0.48As asymmetric quantum wells
✍ Makoto Kohda; Takayuki Nihei; Junsaku Nitta 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 247 KB

We have investigated the influence of the quantum well (QW) thickness for the gate controlled Rashba spin orbit interaction (SOI) in InP/In 0.8 Ga 0.2 As/In 0.52 Al 0.48 As asymmetric QWs from the analysis of the weak antilocalization. We prepared two different samples with 5 and 10 nm In 0.8 Ga 0.2