WA-B5 nonalloyed and "In situ" ohmic contacts to highly doped n-type GaAs layers grown by molecular beam epitaxy (MBE) for field-effect transistors

✍ Scribed by DiLorenzo, J.V.; Niehaus, W.C.; Cho, A.Y.

• Book ID: 114592900
• Publisher: IEEE
• Year: 1978
• Tongue: English
• Weight: 175 KB
• Volume: 25
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/t-ed.1978.19339