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Voltage-Induced Ferromagnetic Resonance in Magnetic Tunnel Junctions

✍ Scribed by Zhu, Jian; Katine, J.; Rowlands, Graham; Chen, Yu-Jin; Duan, Zheng; Alzate, Juan; Upadhyaya, Pramey; Langer, Juergen; Amiri, Pedram; Wang, Kang

Book ID
111677414
Publisher
The American Physical Society
Year
2012
Tongue
English
Weight
671 KB
Volume
108
Category
Article
ISSN
0031-9007

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## Abstract Double‐barrier magnetic tunnel junctions (DMTJs) with and without an amorphous ferromagnetic material such as CoFeSiB 10, CoFe 5/CoFeSiB 5, and CoFe 10 (nm) were prepared and compared to investigate the bias voltage dependence of the tunneling magnetoresistance (TMR) ratio. Typical DMTJ