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Voltage-Gated Metal-Enhanced Fluorescence II: Effects of Fluorophore Concentration on the Magnitude of the Gated-Current

✍ Scribed by Anatoliy I. Dragan; Yongxia Zhang; Chris D. Geddes


Book ID
106412682
Publisher
Springer
Year
2009
Tongue
English
Weight
248 KB
Volume
19
Category
Article
ISSN
1053-0509

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Effect of degas before metal gate deposi
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The interaction between the dielectric and the metal gates is crucial for effective workfunction and V T . In this work, we investigate the effect of a degas step just before the metal gate deposition. The purpose of this step is to remove the water adsorbed at the surface of the dielectric by heati