✦ LIBER ✦
Voltage- and temperature-dependent gate capacitance and current model: application to ZrO2 n-channel MOS capacitor
✍ Scribed by Yang-Yu Fan; Nieh, R.E.; Lee, J.C.; Lucovsky, G.; Brown, G.A.; Register, L.F.; Banerjee, S.K.
- Book ID
- 114616890
- Publisher
- IEEE
- Year
- 2002
- Tongue
- English
- Weight
- 510 KB
- Volume
- 49
- Category
- Article
- ISSN
- 0018-9383
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