✦ LIBER ✦

VIB-6 perpendicular transport measurements in GaAs/(Al,Ga)As/GaAs heterostructures

✍ Scribed by Solomon, P.M.; Wright, S.L.

Book ID: 114595823
Publisher: IEEE
Year: 1986
Tongue: English
Weight: 186 KB
Volume: 33
Category: Article
ISSN: 0018-9383
DOI: 10.1109/t-ed.1986.22835

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Energy band alignment in GaAs:(Al,Ga)As

Energy band alignment in GaAs:(Al,Ga)As heterostructures

✍ J. Batey; S.L. Wright 📂 Article 📅 1986 🏛 Elsevier Science ⚖ 40 KB

Energy band alignment in GaAs:(Al,Ga)As

Energy band alignment in GaAs:(Al,Ga)As heterostructures

✍ J. Batey; S.L. Wright 📂 Article 📅 1986 🏛 Elsevier Science 🌐 English ⚖ 257 KB

Lateral transport in GaAs-(Al,Ga)As supe

Lateral transport in GaAs-(Al,Ga)As superlattices investigated by transient grating measurements

✍ H. Weinert; J. Kolenda; M. Petrauskas 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 409 KB

Measurements of transient hall effect in

Measurements of transient hall effect in Ga0.72Al0.28As/GaAs heterostructures

✍ I.K. Kristensen; O.P. Hansen 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 218 KB

Deep levels in GaAs/Al0.78Ga0.22As heter

Deep levels in GaAs/Al0.78Ga0.22As heterostructures

✍ Umar S. Qurashi; Nazir A. Naz; M. Naeem Khan; Nasim Zafar; M. Zafar Iqbal; P. Kr 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 161 KB

A preliminary study of growth interruption effects on the GaAs/AlGaAs layers is reported. Deep level transient spectroscopy (DLTS) is performed on Al Schottky barrier devices fabricated on Si-doped, isotype GaAs/Al 0.78 Ga 0.22 As heterostructures grown by molecular beam epitaxy (MBE), both with (20

Anomalous bands in the photoluminescent

Anomalous bands in the photoluminescent spectra from GaAs-(Al, Ga)As double heterostructures

✍ V. Swaminathan; W.R. Wagner; N.E. Schumaker; R.C. Miller 📂 Article 📅 1982 🏛 Elsevier Science 🌐 English ⚖ 573 KB