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Very low threshold planar buried heterostructure InGaAsP/InP laser diodes prepared by three-stage metalorganic chemical vapor deposition

✍ Scribed by Ishiguro, H.; Kawabata, T.; Koike, S.


Book ID
120072500
Publisher
American Institute of Physics
Year
1987
Tongue
English
Weight
259 KB
Volume
51
Category
Article
ISSN
0003-6951

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