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Very low surface recombination velocities on 2.5 Ω cm Si wafers, obtained with low-temperature PECVD of Si-oxide and Si-nitride

✍ Scribed by C. Leguijt; P. Lölgen; J.A. Eikelboom; P.H. Amesz; R.A. Steeman; W.C. Sinke; P.M. Sarro; L.A. Verhoef; P.-P. Michiels; Z.H. Chen; A. Rohatgi


Book ID
108029178
Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
255 KB
Volume
34
Category
Article
ISSN
0927-0248

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