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Very Low Degree of Energetic Disorder as the Origin of High Mobility in an n-channel Polymer Semiconductor

✍ Scribed by Mario Caironi; Matt Bird; Daniele Fazzi; Zhihua Chen; Riccardo Di Pietro; Christopher Newman; Antonio Facchetti; Henning Sirringhaus


Publisher
John Wiley and Sons
Year
2011
Tongue
English
Weight
877 KB
Volume
21
Category
Article
ISSN
1616-301X

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