Vertical transport in GaAs/GaAlAs superlattices: Carrier density effects

✍ Scribed by D. Block; B. Boulanger; P. Edel; R. Romestain; B. Deveaud; B. Lambert; A. Regreny

• Publisher: Elsevier Science
• Year: 1989
• Tongue: English
• Weight: 390 KB
• Volume: 5
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1016/0749-6036(89)90327-3

✦ Synopsis

With an all-optical technique, we have studied vertical transport in a (3 \mathrm{~nm} / 3 \mathrm{~nm}) GaAs/GaAlAs superlattice held at (77 \mathrm{~K}). Its efficiency is strongly dependent on the photoexcitation density. This is at least partly due to a decrease of the non-radiative processes in the superlattice. The value of the ambipolar diffusion coefficient is equal to (0.65 \mathrm{~cm}^{2} / \mathrm{s}) which is due to the low mobility of holes.