✦ LIBER ✦
Vertical-Gate Si/SiGe Double-HBT-Based Capacitorless 1T DRAM Cell for Extended Retention Time at Low Latch Voltage
✍ Scribed by Ja Sun Shin; Hyunjun Choi; Hagyoul Bae; Jaeman Jang; Daeyoun Yun; Euiyoun Hong; Dae Hwan Kim; Dong Myong Kim
- Book ID
- 119799641
- Publisher
- IEEE
- Year
- 2012
- Tongue
- English
- Weight
- 431 KB
- Volume
- 33
- Category
- Article
- ISSN
- 0741-3106
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