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Vertical Epitaxial Wire-on-Wire Growth of Ge/Si on Si(100) Substrate

✍ Scribed by Shimizu, Tomohiro; Zhang, Zhang; Shingubara, Shoso; Senz, Stephan; Gösele, Ulrich


Book ID
127287973
Publisher
American Chemical Society
Year
2009
Tongue
English
Weight
447 KB
Volume
9
Category
Article
ISSN
1530-6984

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Freestanding Si nano-wires were grown by gas source molecular beam epitaxy on Au/Si (100), ( 111), (110), and ( 113) substrates. The morphology of Si nano-wires is investigated using scanning electron microscopy. This method provides a possible way to fabricate silicon quantum wires.