Vertical conduction in thin Si/CaF2/Si structures

✍ Scribed by Jeffrey W. Sleight; Mark A. Reed; Chih-Chen Cho; Bruce Gnade

• Publisher: Elsevier Science
• Year: 1993
• Tongue: English
• Weight: 203 KB
• Volume: 13
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1006/spmi.1993.1071

✦ Synopsis

Electrical characteristics of thin ((\sim 100 \AA)), single barrier (\mathrm{Si} / \mathrm{CaF}{2} / \mathrm{Si}) heterostructures have been measured for the first time for both (A) and (B) phase (\mathrm{CaF}{2}). (\mathrm{I}(\mathrm{V}, \mathrm{T})) measurements for different thickness (\mathrm{CaF}{2}) barriers show characteristics that are consistent with conduction through defect sites in the (\mathrm{CaF}{2}) layer. The (B)-phase (\mathrm{CaF}_{2}) exhibits far more defects than the (A)-phase material. Measurements of different size mesas indicate a defect density on the order of one per (1000 \mu \mathrm{m}^{2}) in the (100 \AA) barrier thickness (A)-phase material.