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Vertical cavity lasers based on vertically coupled quantum dots

โœ Scribed by Lott, J.A.; Ledentsov, N.N.; Ustinov, V.M.; Egorov, A.Yu.; Zhukov, A.E.; Kop'ev, P.S.; Alferov, Zh.I.; Bimberg, D.


Book ID
120623616
Publisher
The Institution of Electrical Engineers
Year
1997
Tongue
English
Weight
299 KB
Volume
33
Category
Article
ISSN
0013-5194

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Radiation characteristics of injection l
โœ S.V. Zaitsev; N.Yu. Gordeev; Yu.M. Sherniakov; V.M. Ustinov; A.E. Zhukov; A.Yu. ๐Ÿ“‚ Article ๐Ÿ“… 1997 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 130 KB

We have studied injection lasers based on InGaAs/GaAs vertically coupled quantum dots (QD) grown by molecular beam epitaxy. The threshold current density decreases by one order of magnitude down to 90 A cm -2 (300 K) with an increase of the number of QD stacks (N ) up to 10. For N โ‰ฅ 3 lasing occurs