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Velocity auto-correlation and hot-electron diffusion constant in GaAs and InP

✍ Scribed by M. Deb Roy; B. R. Nag

Publisher
Springer
Year
1982
Tongue
English
Weight
762 KB
Volume
28
Category
Article
ISSN
1432-0630

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This paper considers the adaptation of drift-diffusion device simulation methodology to study Auger-recombination-induced hot electron transport characteristics in InGaAsP/InP double heterostructure laser diodes. In order to model the transport behaviour of the Auger hot electrons, we decompose the