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Variation in emitter diffusion depth by TiSi2 formation on polysilicon emitters of Si bipolar transistors

✍ Scribed by Kondo, M.; Shimamoto, H.; Washio, K.


Book ID
114538838
Publisher
IEEE
Year
2001
Tongue
English
Weight
241 KB
Volume
48
Category
Article
ISSN
0018-9383

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