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Vapour Growth of ZnSxSe1—x Single Crystals

✍ Scribed by Yu.V. Korostelin; V.I. Kozlovsky

Publisher
John Wiley and Sons
Year
2002
Tongue
English
Weight
208 KB
Volume
229
Category
Article
ISSN
0370-1972

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✦ Synopsis

Seeded chemical and physical vapour transport with H 2 and He, respectively, was used to grow twin-free ZnS x Se 1--x (x < 0.15) single crystals with diameter of 50-55 mm and height up to 15 mm. Use of a source with polycrystalline ZnSSe having a composition gradient along the furnace axis, allowed to improve the homogeneity of alloy composition. The change of x per 1 cm along the growth direction in the grown crystals was as small as 1.5%. The etch pit density was (3-5) Â 10 4 cm --2 . Specific resistance of ZnSSe wafers was decreased up to 0.06 W cm by annealing in liquid Zn : Al.

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