Van Hove singularity scenario and hole concentration in high-Tc HgBa2CaCu2O6+δ superconductor. Pressure effects

✍ Scribed by Bal K. Agrawal; Savitri Agrawal; M.D. Tiwari

• Publisher: Elsevier Science
• Year: 1994
• Tongue: English
• Weight: 901 KB
• Volume: 234
• Category: Article
• ISSN: 0921-4534
• DOI: 10.1016/0921-4534(94)90050-7

✦ Synopsis

The electronic structure and the hole concentrations in the recently discovered high-T, superconductor HgBazCaCu206+6 (6= 0, 1) have been investigated by employing a first-principles full potential self-consistent linear muffin-tin orbital (LMTO) method with the local density functional theory. The scalar relativistic effects have been considered. The hole concentrations of the Cud and 0 p*, p,, orbitals are seen to be smaller for the HgBa2CaCu207 system than those of the HgBa2CaCu206 solid. The van Hove singularity (vHS) induced Cud and Op mixed peak which is seen to lie above the Fermi level (&) at the X(R) points in the 6= 1 system shifts below EF in the 6~0 system and thus needs hole doping either by oxygenation or by other methods for making the S=O system superconducting. For the S=O system, the performed calculation reveals that the hole concentration always increases with the pressure on the crystal showing no maximum value or a saturation value. On the other hand, the vHS peak approaches the Fermi level with increased pressure on the crystal (or decrease in the crystal volume) and is pinned at EF for a relative crystal volume of V/V,= 0.77 ( V,, is the experimental volume at normal pressure). One observes the Fermi surface nesting area to become maximum at this particular volume. On further reduction of the lattice volume, the vHS peak moves above and away from the EF This result correlates with the observed behaviour of r, with increased pressure and leads to the conclusion that T, is maximum when the vHS peak is pinned at EF.