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Validity and applicability of triangular potential well approximation in modeling of MOS structure inversion and accumulation layer

✍ Scribed by Yutao Ma; Litian Liu; Yu, Z.; Zhijian Li


Book ID
114538278
Publisher
IEEE
Year
2000
Tongue
English
Weight
142 KB
Volume
47
Category
Article
ISSN
0018-9383

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