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Valence-subband level crossing in GaAs/GaAsP strained-barrier quantum well structures observed by circularly polarized photoluminescence excitation spectroscopy

✍ Scribed by Hiroyuki Yaguchi; Kazunobu Ota; Yutaka Takahashi; Koji Muraki; Kentaro Onabe; Yasuhiro Shiraki; Ryoichi Ito


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
276 KB
Volume
37
Category
Article
ISSN
0038-1101

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