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Valence band mixing of cubic GaN/AlN quantum dots

✍ Scribed by Segarra, C; Climente, J I; Planelles, J


Book ID
120491698
Publisher
Institute of Physics
Year
2012
Tongue
English
Weight
233 KB
Volume
24
Category
Article
ISSN
0953-8984

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In a stacked structure of cubic GaN/AlN islands grown in a Stranski-Krastanov mode, the critical thickness for the GaN islanding (2D-3D transition) decreases by a factor of up to 10 between the initial dot layer and the third one. This variation of the critical thickness is strongly dependent on the