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Valence band edge of ultra-thin silicon oxide near the interface

✍ Scribed by H. Nohira; A. Omura; M. Katayama; T. Hattori


Book ID
108418610
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
252 KB
Volume
123-124
Category
Article
ISSN
0169-4332

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πŸ“œ SIMILAR VOLUMES


Conductance oscillations near bonded int
✍ O.V. Naumova; I.V. Antonova; V.P. Popov; N.V. Sapognikova; Yu.V. Nastaushev; E.V πŸ“‚ Article πŸ“… 2003 πŸ› Elsevier Science 🌐 English βš– 127 KB

The conductance oscillations have been observed at room temperature in the ultra thin silicon layers of the silicon-on-insulator structures prepared with the bonding and hydrogen slicing technology. An origin of the oscillations is attributed to a formation of tunnel barriers for one type of carrier