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Vacuum ultraviolet, photoemission and theoretical studies of the electronic structure of Al2O3 up to 1000°C

✍ Scribed by R.H. French; R.L. Coble; R.V. Kasowski; F.S. Ohuchi


Publisher
Elsevier Science
Year
1988
Weight
227 KB
Volume
150
Category
Article
ISSN
0378-4363

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✦ Synopsis


The high temperature properties of AI203 are important to the processing of this material, for understanding its conductivity and mass transport behavior for sintering, and to the high temperature applications of the material as an optical and structural material. We report the results of a study of the electronic structure of single crystal a-AIzO 3 using results of vacuum ultraviolet and X-ray photoelectron spectroscopies, and pseudofunction band structure calculations of the room-and high-temperature electronic structure, incorporating the lattice expansion and electron-phonon interaction. The optical direct band gap is found to decrease linearly from 8.8 eV at room temperature to 7.2 eV at 1763 K with a temperature coefficient of -1.1 mew K. The effect of thermal expansion and the electron-phonon interaction, on the band gap, is found to be linear in this temperature range. The valence-band width is constant with temperature, while the unoccupied conduction band states broaden and shift toward the valence band.


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