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Vacancy-like defects in a-Si: a first principles study

✍ Scribed by C.R. Miranda; A. Antonelli; A.J.R. da Silva; A. Fazzio

Book ID
116667746
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
294 KB
Volume
338-340
Category
Article
ISSN
0022-3093

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## Abstract We present a theoretical study of hydrogenated amorphous silicon (a‐Si:H) with a device quality hydrogen concentration of 11 at%. We used a first principle, parameters‐free method. The interaction between the atoms was treated quantum mechanically within the density functional theory ap