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Vacancy-induced 2 × 2 reconstruction of the Si-terminated 3C SiC(111) surface: ab initio calculations of the atomic and electronic structure

✍ Scribed by Bernd Wenzien; Peter Käckell; Friedhelm Bechstedt

Book ID: 116067206
Publisher: Elsevier Science
Year: 1995
Tongue: English
Weight: 397 KB
Volume: 331-333
Category: Article
ISSN: 0039-6028
DOI: 10.1016/0039-6028(95)00287-1

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## Abstract We present a comparative study of C‐terminated and Si‐rich 3C–SiC(100) surfaces exposed to a H~2~/CH~4~ microwave plasma used in diamond growth. Each surface is characterized before and after short plasma exposures using LEED, XPS and STM techniques. In both cases, a 5 minutes plasma ex