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Vacancy formation enthalpy in γ cerium from positron annihilation

✍ Scribed by M. Boidron; R. Paulin

Publisher
Elsevier Science
Year
1979
Tongue
English
Weight
263 KB
Volume
73
Category
Article
ISSN
0375-9601

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The Doppler broadening spectrum of a silicon wafer was measured using a variable-energy positron beam to investigate the effects of vacancy-type defects induced by 180 keV Ar ion implantation. The Sparameter in the damaged layer decreases with annealing temperature up to 673 K, and then increases wi