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Vacancy defects in indium oxide: An ab-initio study

✍ Scribed by Pakpoom Reunchan; Xin Zhou; Sukit Limpijumnong; Anderson Janotti; Chris G. Van de Walle


Book ID
113514038
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
853 KB
Volume
11
Category
Article
ISSN
1567-1739

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We discuss the influence of band structures and point defects (oxygen vacancies and interstitials, and praseodymium vacancies) in Pr 2 O 3 , PrO 2 , and PrSiO 3.5 on the electrical properties of high-K gate dielectrics for the application in CMOS technology. In particular, we consider the origin of