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Vacancy Defects in As-Polished and in High-Fluence H+-Implanted 6H-SiC Detected by Slow Positron Annihilation Spectroscopy

✍ Scribed by Barthe, Marie France; Desgardin, P.; Henry, L.; Corbel, C.; Britton, D.T.; Kögel, Gottfried; Sperr, Peter; Triftshäuser, Werner; Vicente, Patrice; diCioccio, L.

Book ID: 120540174
Publisher: Trans Tech Publications, Ltd.
Year: 2002
Tongue: English
Weight: 347 KB
Volume: 389-393
Category: Article
ISSN: 1662-9752
DOI: 10.4028/www.scientific.net/MSF.389-393.493

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