V-band switch configuration based on successive resonance's single pole double throw

✍ Scribed by Laurent Desclos; Kenichi Maruhashi; Mohammad Madihian

• Book ID: 101268342
• Publisher: John Wiley and Sons
• Year: 1998
• Tongue: English
• Weight: 225 KB
• Volume: 19
• Category: Article
• ISSN: 0895-2477
• DOI: 10.1002/(sici)1098-2760(19981220)19:6<406::aid-mop8>3.0.co;2-n

✦ Synopsis

This letter concerns the design consideration and performance of a V-band monolithic TrR switch for millimeter-wa¨e wireless networks applications. The de¨eloped switch IC has a structure using ( ) successi¨e resonance's single pole double throw SRSPDT . The resonances are made with the FET structure and transmission lines in parallel. The switching function is ensured by heterojunction FETs ( ) HJFETs . With a control ¨oltage of 0 Vry3 V, the de¨eloped TrR switch exhibits a minimum insertion loss of 5 dB, able to be reduced by 2 dB with another proposed configuration, a minimum isolation of 40 dB, o¨er 5 GHz centered at 63.8 GHz. The monolithic TrR switch chip size is 1.9 mm = 1 mm. Performance impro¨ement is at the expense of the size of the chip.