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UV Light-Emitting Diode Fabricated on Hetero-ELO-Grown Al0.22Ga0.78N with Low Dislocation Density

✍ Scribed by Kamiyama, S. ;Iwaya, M. ;Takanami, S. ;Terao, S. ;Miyazaki, A. ;Amano, H. ;Akasaki, I.


Publisher
John Wiley and Sons
Year
2002
Tongue
English
Weight
114 KB
Volume
192
Category
Article
ISSN
0031-8965

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