✦ LIBER ✦
Utilization of an electron beam resist process to examine the effects of asymmetric gate recess on the device characteristics of AlGaAs/InGaAs PHEMTs
✍ Scribed by Grundbacher, R.; Ballegeer, D.; Ketterson, A.A.; Kao, Y.-C.; Adesida, I.
- Book ID
- 114537068
- Publisher
- IEEE
- Year
- 1997
- Tongue
- English
- Weight
- 185 KB
- Volume
- 44
- Category
- Article
- ISSN
- 0018-9383
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