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Using an atomic force microscope in the surface modification regime to determine the migration energy of surface defects

✍ Scribed by E. V. Blagov; V. M. Mostepanchenko; G. L. Klimchitskaya

Book ID
110121282
Publisher
Springer
Year
1999
Tongue
English
Weight
78 KB
Volume
44
Category
Article
ISSN
1063-7842

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Atomic force microscopy and high-resolution RBS investigation of the surface modification of magnetron sputter-etched Si(111) in an argon plasma at different pressures
✍ Deenapanray, P. N. K.; Hillie, K. T.; Demanet, C. M.; Ridgway, M. C. πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 353 KB πŸ‘ 2 views

The surface morphology and metallic contamination of magnetron sputter-etched Si(111) was investigated by atomic force microscopy (AFM) and high-resolution Rutherford backscattering spectroscopy (RBS) as a function of Ar plasma pressure. The root-mean-square roughness (R rms ) of plasma-etched Si de