Using a four-probe scanning tunneling microscope to characterize phosphorus doped ohmic contacts for atomic scale devices in silicon

✍ Scribed by W.R. Clarke; X.J. Zhou; A. Fuhrer; C. Polley; D.L. Thompson; T.C.G. Reusch; M.Y. Simmons

• Publisher: Elsevier Science
• Year: 2008
• Tongue: English
• Weight: 260 KB
• Volume: 40
• Category: Article
• ISSN: 1386-9477
• DOI: 10.1016/j.physe.2007.10.032