✦ LIBER ✦
Using a First Principles Coulomb Scattering Mobility Model for 4H-SiC MOSFET Device Simulation
✍ Scribed by Potbhare, Siddharth; Pennington, Gary; Goldsman, Neil; Lelis, Aivars J.; Habersat, Daniel B.; McLean, F. Barry; McGarrity, J.M.
- Book ID
- 121351786
- Publisher
- Trans Tech Publications, Ltd.
- Year
- 2006
- Tongue
- English
- Weight
- 242 KB
- Volume
- 527-529
- Category
- Article
- ISSN
- 1662-9752
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