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Useful relations for highly sensitive sensors based on carrier concentration

✍ Scribed by Chovet, A. ;Cristoloveanu, S. ;Daher, Y. ;Malyutenko, V. K.

Book ID
105376790
Publisher
John Wiley and Sons
Year
1983
Tongue
English
Weight
228 KB
Volume
76
Category
Article
ISSN
0031-8965

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H, in air can be detected with sensors based on semiconductor oxides. A new technique for growing a hydrogen sensor based on SnO,(Bi,O,) thin films is presented here. The thin films have a thickness of 200-250 nm and the metals are in the atomic ratio Bi/Sn.= (3-S) at.%](97-95) at.%. The two metals