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Use of plasma impedance monitoring for the determination of SF6reactive ion etch process end points in a SiO2/Si system

✍ Scribed by M. N. A. Dewan; P. J. McNally; T. Perova; P. A. F. Herbert


Publisher
Maney Publishing
Year
2001
Tongue
English
Weight
222 KB
Volume
5
Category
Article
ISSN
1432-8917

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