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Use of magnetic fields in crystal growth from semiconductor melts

✍ Scribed by Koichi Kakimoto; Kyung-Woo Yi

Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
204 KB
Volume
216
Category
Article
ISSN
0921-4526

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✦ Synopsis

The three-dimensional pattern of a molten silicon flow under a magnetic field was revealed by X-ray radiography and large-scale three-dimensional numerical simulation. A flow visualization technique using X-ray radiography and a three-dimensional numerical simulation governed by a magneto-hydrodynamic equation revealed the pattern of the flow to be axisymmetric and under a low magnetic field, whereas the pattern becomes non-axisymmetric and threedimensional under a high magnetic field even if an axisymmetric temperature boundary condition was applied. The result leads us to understand that the asymmetry originates in the intrinsic instability.

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Effect of magnetic field on melt flow and crystal growth of oxide crystals
✍ Yasuto Miyazawa πŸ“‚ Article πŸ“… 1999 πŸ› Elsevier Science 🌐 English βš– 528 KB

The flow in an oxide melt such as LiNbOj and TiO 2 in a high magnetic field was observed by using magnetic-field-applied Czochralski equipment for oxide crystals. It was found that the flows in oxides melts were very much different from these in a semiconductor melt. The single crystals of TiO~ we