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Use of high-purity AlxGa1−xas layers in epitaxial structures for high-power microwave field-effect transistors

✍ Scribed by K. S. Zhuravlev; A. I. Toropov; T. S. Shamirzaev; A. K. Bazarov; Yu. N. Rakov; Yu. B. Myakishev


Book ID
110124049
Publisher
SP MAIK Nauka/Interperiodica
Year
1999
Tongue
English
Weight
42 KB
Volume
25
Category
Article
ISSN
1063-7850

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